1·As a result, output character of PNP bipolar transistor is barely satisfying.
这些原因导致了PNP双极晶体管的输出性能差强人意。
2·The invention relates to a bipolar transistor and a manufacturing method thereof.
本发明涉及双极晶体管及其制造方法。
3·The inverter can be manufactured with the insulation gate bipolar transistor module.
逆变器采用绝缘栅双极晶体管模块制造。
4·Insulated Gate Bipolar Transistor (IGBT) as controllable switch, has been applied widely.
绝缘栅双极二级管(IGBT)作为一种可控开关，获得了广泛应用。
5·Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。
6·On a basic bipolar transistor, with ports for electrical input and output, the law applies straightforwardly.
在一般的双极晶体管，带有电输入和输出端口，这定律完全适用。
7·Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
8·The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
9·The circuit is constructed by a operational amplifier and bipolar transistor current mirrors with multiple outputs.
该电路由一集成运算放大器及多端输出的双极晶体管电流镜构成。
10·Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.
由于其自身的结构与封装形式，塑封双极型功率管存在很多可靠性问题。